Class 3. P: ECE 305 and 365. Introduction to most aspects of
large-scale MOS integrated circuit design, including device
fabrication and modeling; useful circuit building blocks; system
considerations; and algorithms to accomplish common tasks. Most
circuits discussed are treated in detail, with particular attention
given those whose regular and/or expandable structures are primary
candidates for integration. All circuits are digital and are
considered in the context of the silicon-gate MOS
enhancement-depletion technology. Homework requires the use of
existing IC mask layout software; term projects assigned.