P: EE 305 and 365. Introduction to most aspects of large-scale MOS
integrated circuit design, including device fabrication and modeling;
useful circuit building blocks; system considerations; and algorithms to
accomplish common tasks. Most circuits discussed are treated in detail,
with particular attention given those whose regular and/or expandable
structures are primary candidates for integration. All circuits are digital
and are considered in the context of the silicon-gate MOS
enhancement-depletion technology. Homework requires the use of existing IC
mask layout software; term projects assigned.